NTB5411N, NTP5411N
TYPICAL PERFORMANCE CURVES
140
120
7V
10 V
6.5 V
T J = 25 ° C
6V
140
120
V DS w 10 V
100
100
80
60
5.5 V
80
60
40
40
T J = 25 ° C
T J = ? 55 ° C
20
V GS = 4.5 V
20
T J = 125 ° C
0
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
15
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 1. On ? Region Characteristics
12
V GS , GATE ? TO ? SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
14
13
12
11
10
9
I D = 40 A
T J = 25 ° C
11
10
9
8
7
6
T J = 25 ° C
V GS = 10 V
8
5
6
7
8
9
10
5
10
30
50
70
90
110
130 150
2.4
V GS , GATE ? TO ? SOURCE VOLTAGE (V)
Figure 3. On ? Resistance vs. Gate ? to ? Source
Voltage
1000
I D , DRAIN CURRENT (A)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
2.2
2
I D = 40 A
V GS = 10 V
V GS = 0 V
T J = 150 ° C
1.8
1.6
1.4
1.2
1
0.8
100
T J = 125 ° C
0.6
? 50
? 25
0
25
50
75
100
125
150
175
10
5
10
15
20
25
30
35
40
45
50
55 60
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
vs. Voltage
相关PDF资料
NTB5412NT4G MOSFET N-CH 60V 60A D2PAK
NTB5426NT4G MOSFET N-CH 60V 120A D2PAK
NTB5605T4G MOSFET P-CH 60V 18.5A D2PAK
NTB6410ANG MOSFET N-CH 100V 76A D2PAK
NTB6411ANG MOSFET N-CH 100V 72A D2PAK
NTB6413ANG MOSFET N-CH 100V 42A D2PAK
NTB85N03T4G MOSFET N-CH 28V 85A D2PAK
NTBV5605T4G MOSFET P-CH 60V 18.5A D2PAK
相关代理商/技术参数
NTB5412N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 60 Amps, 60 Volts N-Channel D2PAK, TO-220
NTB5412NT4G 功能描述:MOSFET NFET D2PAK 60V 60A 14.0mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB5426N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 120 Amps, 60 Volts N-Channel D2PAK, TO-220
NTB5426NT4G 功能描述:MOSFET 60V, 4.5mOhms N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB5605P 功能描述:MOSFET -60V -18.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB5605P_05 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -60 Volt, -18.5 Amp
NTB5605PG 功能描述:MOSFET -60V -18.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB5605PT4 功能描述:MOSFET -60V -18.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube